Myronov, Maksym2018-09-032018-09-032018-08-08Myronov, Maksym. (2018) In situ doping of silicon carbide semiconductor via epitaxy. The 6th International Conference on Nanomaterials and Advanced Energy Storage Systems. p17.http://nur.nu.edu.kz/handle/123456789/3423Silicon carbide (SiC) is a wide bandgap semiconductor which can operate at high temperatures and resist chemicals and radiation, making it ideal for applications in a range of harsh environments [1]. Among over 200 polytypes of SiC, only cubic silicon carbide (3C-SiC) can be heteroepitaxially grown on Si. However, there are still no commercial 3C-SiC devices available due to its cost and issues with growth and leakage currents [2]. While leakage into the underlying Si can be managed by transferring the 3C-SiC layer to an insulating substrate, this process is difficult to scale and integrate into current technologies [3].enAttribution-NonCommercial-ShareAlike 3.0 United StatesSilicon carbide (SiC)phosphorus (P)silicon-on-insulator (SOI)Abstract