Crystallographic Characterisation of Ultra-Thin, or Amorphous Transparent Conducting Oxides—The Case for Raman Spectroscopy
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Date
2020-01-07
Authors
Caffrey, David
Zhussupbekova, Ainur
Vijayaraghavan, Rajani K.
Ainabayev, Ardak
Kaisha, Aitkazy
Sugurbekova, Gulnar
Shvets, Igor V.
Fleischer, Karsten
Journal Title
Journal ISSN
Volume Title
Publisher
MDPI
Abstract
The electronic and optical properties of transparent conducting oxides (TCOs) are closely
linked to their crystallographic structure on a macroscopic (grain sizes) and microscopic
(bond structure) level. With the increasing drive towards using reduced film thicknesses in
devices and growing interest in amorphous TCOs such as n-type InGaZnO4 (IGZO), ZnSnO3
(ZTO), p-type CuxCrO2, or ZnRh2O4, the task of gaining in-depth knowledge on their crystal
structure by conventional X-ray diffraction-based measurements are becoming increasingly difficult.
We demonstrate the use of a focal shift based background subtraction technique for Raman
spectroscopy specifically developed for the case of transparent thin films on amorphous substrates.
Using this technique we demonstrate, for a variety of TCOs CuO, a-ZTO, ZnO:Al), how changes
in local vibrational mo
Description
Keywords
transparent conducting oxide, TCO, Raman spectroscopy, amorphous oxide, oxide electronics, background subtraction
Citation
Caffrey, D., Zhussupbekova, A., Vijayaraghavan, R. K., Ainabayev, A., Kaisha, A., Sugurbekova, G., … Fleischer, K. (2020). Crystallographic characterisation of ultra-thin, or amorphous transparent conducting oxides-the case for Raman spectroscopy. Materials, 13(2). https://doi.org/10.3390/ma13020267