GaN nanostructures for use in microelectronics
Files
Date
2013
Authors
Bolat, R.
Alimzhanov, D.
Sugurbekova, G.
Journal Title
Journal ISSN
Volume Title
Publisher
Nazarbayev University
Abstract
We have demonstrated possibility of replacing toxic and pyrophoric NH3, HCl by safer NH4Cl in the process of GaN synthesis. The method is flexible enough to produce thin films or bulk microrods. Good quality thin films were obtained at relatively low temperatures with high growth rate.
Description
Keywords
first research week, microelectronics, GaN