In situ doping of silicon carbide semiconductor via epitaxy

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dc.contributor.authorMyronov, Maksym
dc.date.accessioned2018-09-03T10:54:28Z
dc.date.available2018-09-03T10:54:28Z
dc.date.issued2018-08-08
dc.description.abstractSilicon carbide (SiC) is a wide bandgap semiconductor which can operate at high temperatures and resist chemicals and radiation, making it ideal for applications in a range of harsh environments [1]. Among over 200 polytypes of SiC, only cubic silicon carbide (3C-SiC) can be heteroepitaxially grown on Si. However, there are still no commercial 3C-SiC devices available due to its cost and issues with growth and leakage currents [2]. While leakage into the underlying Si can be managed by transferring the 3C-SiC layer to an insulating substrate, this process is difficult to scale and integrate into current technologies [3].en_US
dc.identifier.citationMyronov, Maksym. (2018) In situ doping of silicon carbide semiconductor via epitaxy. The 6th International Conference on Nanomaterials and Advanced Energy Storage Systems. p17.en_US
dc.identifier.urihttp://nur.nu.edu.kz/handle/123456789/3423
dc.language.isoenen_US
dc.publisherThe 6th International Conference on Nanomaterials and Advanced Energy Storage Systemsen_US
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.subjectSilicon carbide (SiC)en_US
dc.subjectphosphorus (P)en_US
dc.subjectsilicon-on-insulator (SOI)en_US
dc.titleIn situ doping of silicon carbide semiconductor via epitaxyen_US
dc.typeAbstracten_US
workflow.import.sourcescience

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