Craters on silicon surfaces created by gas cluster ion impacts

Simple item page
dc.contributor.authorAllen, L. P.
dc.contributor.authorInsepov, Z.
dc.contributor.authorFenner, D. B.
dc.contributor.authorSanteufemio, C.
dc.contributor.authorBrooks, W.
dc.contributor.authorJones, K. S.
dc.contributor.authorYamada, I.
dc.date.accessioned2017-09-27T10:14:43Z
dc.date.available2017-09-27T10:14:43Z
dc.date.issued2002
dc.description.abstractAtomic force microscopy ~AFM! and high-resolution transmission electron microscope ~HRTEM! cross section imaging of individual gas cluster ion impact craters on Si~100! and Si~111! substrate surfaces is examined. The comparison between 3 and 24 kV cluster impacts from Ar and O2 gas sources is shown. Results for low fluence (1010 ions/cm2) 24 kV Ar individual cluster impacts onto a Si~100! and Si~111! substrate surfaces are compared with hybrid molecular dynamics ~HMD! simulations. A HMD method is used for modeling impacts of Arn (n5135, 225! clusters, with energies of 24–50 eV/atom, on Si~100! and Si~111! surfaces. On a Si~100!, craters are nearly triangular in cross section, with the facets directed along the close-packed ~111! planes. The Si~100! craters exhibit four-fold symmetry as imaged by cross-sectional HRTEM, and AFM top view, in agreement with modeling. In contrast, the shape of craters on a Si~111! shows a complicated six-pointed shape in the modeling, while AFM indicates three-fold symmetry of the impact. The lower energy 3 kV individual cluster impacts reveal the same crater shape in HRTEM cross section for both Ar and O2 gas clusters, but with shallower crater depth than for the higher-energy impacts. The kinetics of the Ar and O2 crater impacts may explain the successful use of higher-energy cluster impacts for etching material of higher initial surface roughness followed by the lower energy impacts as an effective finishing step to achieve smoother surfaces.ru_RU
dc.identifier.citationAllen, L. P., Insepov, Z., Fenner, D. B., Santeufemio, C., Brooks, W., Jones, K. S., & Yamada, I. (2002). Craters on silicon surfaces created by gas cluster ion impacts. Journal of applied physics, 92(7), 3671-3678.ru_RU
dc.identifier.urihttp://nur.nu.edu.kz/handle/123456789/2734
dc.language.isoenru_RU
dc.publisherJournal of applied physicsru_RU
dc.rightsOpen Access - the content is available to the general publicru_RU
dc.rightsAttribution-NonCommercial-ShareAlike 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.titleCraters on silicon surfaces created by gas cluster ion impactsru_RU
dc.typeArticleru_RU

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Craters on silicon surfaces created by gas cluster ion impacts.pdf
Size:
878.42 KB
Format:
Adobe Portable Document Format
Description:
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
6 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Articles